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http://www.ingentaconnect.com/content/asp/jctn/2008/00000005/00000004/art000042. Chen K. T., Fan J. W., Chang S. T., Lin C. Y. - Subband structure and effective mass in the inversion layer of a strain Si-based alloy P-tupe MOSFET. // Journal of Nanoscience and Nanotechnology. 2015. V. 15. N. 3. P. 2168 - 2172.
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http://dx.doi.org/10.1166/jnn.2015.10220