+++Статьи с ScienceDirect

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Очень прошу помочь со следующими статьями:

1) MOCVD of GaAs in a horizontal reactor: modeling and growth
Journal of Crystal Growth, Volume 109, Issues 1-4, 2 February 1991, Pages 241-245
Linda R. Black, Ivan O. Clark, Bradley A. Fox and, William A. Jesser

DOI:

http://dx.doi.org/doi:10.1016/0022-0248(91)90185-8

2)A numerical study on heat transfer and film growth rate of InP and GaAs MOCVD process
Journal of Crystal Growth, Volume 276, Issues 3-4, 1 April 2005, Pages 431-438
Ik-Tae Im, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiyaki Nakano

DOI:

http://dx.doi.org/doi:10.1016/j.jcrysgro.2004.12.082

3)A reaction-transport model of GaAs growth by metalorganic chemical vapor deposition using trimethyl-gallium and tertiary-butyl-arsine
Journal of Crystal Growth, Volume 131, Issues 3-4, August 1993, Pages 283-299
T.J. Mountziaris, S. Kalyanasundaram, N.K. Ingle

DOI:

http://dx.doi.org/doi:10.1016/0022-0248(93)90178-Y

4) Gas phase and surface reactions in the MOCVD of GaAs from triethylgallium, trimethylgallium, and tertiarybutylarsine
Journal of Crystal Growth, Volume 93, Issues 1-4, 1988, Pages 20-28
Thomas R. Omstead, Penny M. Van Sickle, Peter W. Lee, Klavs F. Jensen

DOI:

http://dx.doi.org/doi:10.1016/0022-0248(88)90500-3

5) Reaction kinetics and transport phenomena underlying the low-pressure metalorganic chemical vapor deposition of GaAs
Journal of Crystal Growth, Volume 167, Issues 3-4, 1 October 1996, Pages 543-556
N. K. Ingle, C. Theodoropoulos, T. J. Mountziaris, R. M. Wexler, F. T. J. Smith

DOI:

http://dx.doi.org/doi:10.1016/0022-0248(96)00277-1

6) On the reaction mechanism of GaAs MOCVD
Journal of Crystal Growth, Volume 99, Issues 1-4, January 1990, Pages 525-529
Jun-ichi Nishizawa, Toru Kurabayashi

DOI:

http://dx.doi.org/doi:10.1016/0022-0248(90)90576-7

7) Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD
Journal of Crystal Growth, Volume 77, Issues 1-3, September 1986, Pages 188-193
S. P. DenBaars, B. Y. Maa, P. D. Dapkus, A. D. Danner, H. C. Lee

DOI:

http://dx.doi.org/doi:10.1016/0022-0248(86)90300-3

8 ) Elementary processes and rate-limiting factors in MOVPE of GaAs
Journal of Crystal Growth, Volume 93, Issues 1-4, 1988, Pages 108-114
Max Tirtowidjojo, Richard Pollard

DOI:

http://dx.doi.org/doi:10.1016/0022-0248(88)90514-3

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Исправила!

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Не помогло!
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Для 5ой не помогло только, будьте внимательнее

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Большое спасибо!!!