+++ Journal of Applied Physics и другие

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Уважаемые коллеги, помогите со статьями:

1. B Ghosh, S Purakayastha, P K Datta, R W Miles, M J Carter and R Hill.
Formation of a stable ohmic contact to CdTe thin films through the diffusion of P from Ni-P.
Semiconductor Science and Technology. Volume 10, Number 1.

DOI:

http://dx.doi.org/10.1088/0268-1242/10/1/012

2. Ofer Rotlevia, Kevin D. Dobsona, Doug Roseb and Gary Hodes.
Electroless Ni and NiTe2 ohmic contacts for CdTe/CdS PV cells .
Thin Solid Films. Volume 387, Issues 1-2, Pages 155-157.

DOI:

http://dx.doi.org/10.1016/S0040-6090(00)01738-7

3. D. Kindl, J. Toušková.
Charge transport study in thin film Au-CdTe schottky diodes.
physica status solidi (a). Volume 106, Issue 1, pages 297–304.1988.

DOI:

http://dx.doi.org/10.1002/pssa.2211060136

4. Kevin D. Dobson, Ofer Rotlevi, Doug Rose and Gary Hodes.
Formation and Characterization of Electroless-Deposited NiTe2 Back Contacts to CdTe /CdS Thin-Film Solar Cells
J. Electrochem. Soc., Volume 149, Issue 2, pp. G147-G152 (2002)

DOI:

http://dx.doi.org/10.1149/1.1433752

5. Hao Lin, Wei Xia, Hsiang N. Wu, and Ching W. Tang .
CdS/CdTe solar cells with MoOx as back contact buffers.
Applied Physics Letters, Volume 97, Issue 12 (2010)

DOI:

http://dx.doi.org/10.1063/1.3489414

6. S. M. So, W. Hwang, P. V. Meyers, and C. H. Liu.
Photoelectric study of the Ni‐ and Ni‐TeO2‐electrodeposited n‐type CdTe interfaces.
Journal of Applied Physics, Volume 59, Issue 4 (1986)/

DOI:

http://dx.doi.org/10.1063/1.336512

7. Kosyachenko, L.A. Sklyarchuk, V.M. Sklyarchuk, O.F. Maslyanchuk, O.L. Gnatyuk, V.A. Aoki, T.
Higher Voltage Ni/CdTe Schottky Diodes With Low Leakage Current
Nuclear Science, IEEE Transactions on,
Volume: 56 (2009) Issue: 4 P.p. 1827 - 1834

DOI:

http://dx.doi.org/10.1109/TNS.2009.2021162

8. Mancini, A. M.; Perillo, E.; Quirini, A.; Rosato, E.; Spadaccini, G.; Vasanelli, L.
Physical Properties of Ni Contacts to CdTe
Nuclear Science, IEEE Transactions on
Volume: 30 (1983) Issue: 2 P.p. 1741 - 1742

DOI:

http://dx.doi.org/10.1109/TNS.1983.4332629

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Спасибо, eFo