1. Advanced Materials
Volume 19, Issue 22, pages 3919–3923, November, 2007
M. J. Lee, Y. Park, D. Suh, E. H. Lee, S. Seo, D. C. Kim, B. Jung, B. S. Kang, S. E. Ahn, C. B. Lee, D. H. Seo, Y. K. Cha, I. K. Yoo, J. S. Kim, and B. H. Park
Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
- DOI:
http://dx.doi.org/10.1002/adma.200700251
Volume 50, Number 2, 224-229
E. V. Fedorova, V. B. Rybakov, V. M. Senyavin, A. V. Anisimov and L. A. Aslanov
Synthesis and structure of oxovanadium(IV) complexes [VO(Acac)2] and [VO(Sal: L-alanine)(H2O)]
- DOI:
http://dx.doi.org/10.1134/1.1887896
1996, 6, 505-506
Guillermo Guzman, Fabien Beteille, Roger Morineau and Jacques Livage
Electrical switching in VO2 sol–gel films
- DOI:
http://dx.doi.org/10.1039/JM9960600505
