1) A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor
G. S. Tompa, M. A. McKee, C. Beckham, P. A. Zawadzki, J. M. Colabella, P. D. Reinert, K. Capuder, R. A. Stall and P. E. Norris
Journal of Crystal Growth
Volume 93, Issues 1-4, 1988, Pages 220-227
- DOI:
http://dx.doi.org/10.1016/0022-0248(88)90531-3
R. M. Lum and J. K. Klingert M. G. Lamont
Journal of Crystal Growth
Volume 89, Issue 1, 1 June 1988, Pages 137-142
- DOI:
http://dx.doi.org/10.1016/0022-0248(88)90083-8
A. Brauers, O. Kayser, R. Kall, H. Heinecke* and P. Balk H. Hofmann
Journal of Crystal Growth
Volume 93, Issues 1-4, 1988, Pages 7-14
- DOI:
http://dx.doi.org/10.1016/0022-0248(88)90498-8
Chul Han Kwon, Je Hun Kim, In Sun Jung, Hyunmin Shin and Ki Hyun Yoon
Ceramics International
Volume 29, Issue 8, 2003, Pages 851-856
- DOI:
http://dx.doi.org/10.1016/S0272-8842(03)00019-1
I. Montero, C. Jimenez, J. Perriere
Surface Science, Volumes 251-252, 1 July 1991, Pages 1038-1043
- DOI:
http://dx.doi.org/10.1016/0039-6028(91)91147-P