Помогите, пожалуйста, скачать 4 статьи:
1) Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)
J. L. Weyher, P. D. Brown, A. R. A. Zauner, S. Müller, C. B. Boothroyd, D. T. Foord, P. R. Hageman, C. J. Humphreys, P. K. Larsen, I. Grzegory and S. Porowski
Journal of Crystal Growth
Volume 204, Issue 4, August 1999, Pages 419-428
- DOI:
http://dx.doi.org/10.1016/S0022-0248(99)00217-1
2) Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy using organic group V compounds
H. Okumura, S. Yoshida, S. Misawa and E. Sakuma
Journal of Crystal Growth
Volume 120, Issues 1-4, 2 May 1992, Pages 114-118
- DOI:
http://dx.doi.org/10.1016/0022-0248(92)90373-Q
S. Miyoshi, K. Onabe, N. Ohkouchi, H. Yaguchi and R. Ito, S. Fukatsu and Y. Shiraki
Journal of Crystal Growth
Volume 124, Issues 1-4, 1 November 1992, Pages 439-442
- DOI:
http://dx.doi.org/10.1016/0022-0248(92)90497-7