++++4 статьи JJAP и 1 статья SD

[primavera]

Добрый день! Коллеги, помогите, пожалуйста, скачать статьи:

1) New Epitaxial Growth Method of Cubic GaN on (100) GaAs Using (CH3)3Ga, HCl and NH3
Yoshiki Miura, Naoyuki Takahashi, Akinori Koukitu, Hisashi Seki
Jpn. J. Appl. Phys. 34 (1995) pp. L401-L404

DOI:

http://dx.doi.org/10.1143/JJAP.34.L401

2) Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
Akira Usui, Haruo Sunakawa, Akira Sakai and A. Atsushi Yamaguchi
Jpn. J. Appl. Phys. 36 (1997) pp. L899-L902

DOI:

http://dx.doi.org/10.1143/JJAP.36.L899

3) Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000°C with Halide Vapor Phase Epitaxy
Fumio Hasegawa, Masato Minami, Kenji Sunaba and Takashi Suemasu
Jpn. J. Appl. Phys. 38 (1999) pp. L700-L702

DOI:

http://dx.doi.org/10.1143/JJAP.38.L700

4) Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
Yoshinao Kumagai, Hisashi Murakami, Akinori Koukitu, Kikurou Takemoto and Hisashi Seki
Jpn. J. Appl. Phys. 39 (2000) pp. L703-L706

DOI:

http://dx.doi.org/10.1143/JJAP.39.L703

5) Effects of SiO2 addition on TiO2 crystal structure and photocatalytic activity
David Maria Tobaldi, Antonella Tucci, Andrijana Sever Škapin and Leonardo Esposito
Journal of the European Ceramic Society
Volume 30, Issue 12, September 2010, Pages 2481-2490

DOI:

http://dx.doi.org/10.1016/j.jeurceramsoc.2010.05.014

Спасибо!

[sylvio]

5

[primavera]

Большое спасибо, sylvio )))

[eFo]

1-4

[primavera]

Спасибо, eFo !!