The preparation of high purity gallium arsenide by vapour phase epitaxial growth
J. R. Knight, D. Effer* and P. R. Evans
Solid-State Electronics
Volume 8, Issue 2, February 1965, Pages 178-180
- DOI:
http://dx.doi.org/10.1016/0038-1101(65)90050-X
Спасибо!