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A computational study of gas-phase and surface reactions in deposition and etching of GaAs and AlAs in the presence of HCl
Carlo Cavallotti, Istvan Lengyel, Maria Nemirovskaya and Klavs F. Jensen
Journal of Crystal Growth
Volume 268, Issues 1-2, 15 July 2004, Pages 76-95
- DOI:
http://dx.doi.org/10.1016/j.jcrysgro.2004.04.033
Computational analysis of GaAs/AlGaAs deposition in MOCVD vertical rotating disk reactor
Rui Chen Jianjun Li Xuan Ya Jun Deng Jun Han Shaojun Luo Lingchun Gao Guang-di Shen
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference
- DOI:
http://dx.doi.org/10.1109/ICSICT.2010.5667717