Помогите, пожалуйста, достать эти статьи:
1.Popadic, M. C–V profiling of ultra-shallow junctions using step-like background profiles / Milos Popadic, Vladimir Milovanovic, Cuiqin Xu, Francesco Sarubbi, Lis K. Nanver // Solid-State Electronics, V54, N9, Pages 890-896, 2010.
- DOI:
http://dx.doi.org/10.1016/j.sse.2010.04.028
2. Faur, M. Electrolyte for electrochemical C-V profiling of InP- and GaAs-based structures / Maria Faura, Mircea Faura, D.J. Flooda, M. Goradiab // Materials Science and Engineering: B,Volume 28, Issues 1-3, December 1994, Pages 361-364.
- DOI:
http://dx.doi.org/10.1016/0921-5107(94)90083-3
3. Horanyi, T.S. Electrochemical etching and profiling of silicon / T.S. Horanyi, P. Tutto // Applied Surface Science, Volume 63, Issues 1-4, January 1993, Pages 316-321.
- DOI:
http://dx.doi.org/10.1016/0169-4332(93)90114-Q
4. Furtado, M.T. Band offset in GaAlAs and InGaAs: InP heterojunctions by electrochemical CV profiling / M.T. Furtado, M.S.S. Loural, A.C. Sachs, P.J. Shieh // Superlattices and Microstructures, Volume 5, Issue 4, 1989, Pages 507-510.
- DOI:
http://dx.doi.org/10.1016/0749-6036(89)90373-X
5. Udhayasankar, M. Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling / M Udhayasankara, J Kumara, P Ramasamya // Journal of Crystal Growth, Volume 268, Issues 3-4, 1 August 2004, Pages 389-395.
- DOI:
http://dx.doi.org/10.1016/j.jcrysgro.2004.04.060
6. Basaran, E. Choice of electrolyte for doping profiling in Si by electrochemical C–V technique // Applied Surface Science, Volume 172, Issues 3-4, 15 March 2001, Pages 345-350.
- DOI:
http://dx.doi.org/10.1016/S0169-4332(00)00871-0
7. Basaran, E. Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon / E. Basaran, C.P. Parry, R.A. Kubiak, T.E. Whall, E.H.C. Parker // Journal of Crystal Growth, Volume 157, Issues 1-4, 2 December 1995, Pages 109-112.
- DOI:
http://dx.doi.org/10.1016/0022-0248(95)00397-5
8. Kayambaki, M. Selective etching during the electrochemical C-V profiling of PM-HEMTs / M. Kayambakia, , K. Tsagarakia, M. Lagadasa, P. Panayotatosb // Materials Science and Engineering: B, Volume 80, Issues 1-3, 22 March 2001, Pages 164-167.
- DOI:
http://dx.doi.org/10.1016/S0921-5107(00)00611-5
