1)J. Vac. Sci. Technol. A 18, 2619 (2000);
Plasma deposition of optical films and coatings: A review
Ludvik Martinu and Daniel Poitras
- DOI:
http://dx.doi.org/10.1116/1.1314395
Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices
P. D. Richard, R. J. Markunas, G. Lucovsky, G. G. Fountain, A. N. Mansour, and D. V. Tsu
- DOI:
http://dx.doi.org/10.1116/1.573334
Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor‐based metal–insulator–semiconductor devices
D. G. Park, M. Tao, D. Li, A. E. Botchkarev, Z. Fan, Z. Wang, S. N. Mohammad, A. Rockett, J. R. Abelson, H. Morkoç, A. R. Heyd, and S. A. Alterovitz
- DOI:
http://dx.doi.org/10.1116/1.589003
Low temperature plasma deposition of silicon nitride from silane and nitrogen plasmas
Bengi F. Hanyaloglu and Eray S. Aydil
- DOI:
http://dx.doi.org/10.1116/1.581424
Kim, Byungwhan; Kim, Suyean; Seo, Yong Ho; Kim, Dong Hwan; Kim, Sun Jae; Jung, Sang Chul
Surface Morphology of SiN Film Deposited by a Pulsed-Plasma Enhanced Chemical Vapor Deposition at Room Temperature
- DOI:
http://dx.doi.org/10.1166/jnn.2008.1342