++++5 статей JVST

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Добрый день! Друзья, помогите скачать статьи:

1)J. Vac. Sci. Technol. A, Volume 13 Issue:3 page(s): 607 - 613, 1995
Fourier transform infrared study of rapid thermal annealing of Si:N:H(D) films prepared by remote plasma enhanced chemical vapor deposition
Lu, Z.; Santos-Filho, P.; Stevens, G.; Williams, M. J.; Lucovsky, G.

DOI:

http://dx.doi.org/10.1116/1.579794

2) J. Vac. Sci. Technol. A 19, 2622 (2001);
Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride
Christoph Boehme and Gerald Lucovsky

DOI:

http://dx.doi.org/10.1116/1.1398538

3) J. Vac. Sci. Technol. A 16, 2021 (1998);
Plasma-deposited silicon oxide and silicon nitride films on poly(ethylene terephthalate): A multitechnique study of the interphase regions
A. S. da Silva Sobrinho, N. Schuhler, J. E. Klemberg-Sapieha, M. R. Wertheimer, M. Andrews, and S. C. Gujrathi

DOI:

http://dx.doi.org/10.1116/1.581305

4)J. Vac. Sci. Technol. B 17, 1836 (1999);
Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition
V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky

DOI:

http://dx.doi.org/10.1116/1.590835

5) J. Vac. Sci. Technol. A 16, 1721 (1998);
Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing
G. Lucovsky, H. Niimi, Y. Wu, C. R. Parker, and J. R. Hauser

DOI:

http://dx.doi.org/10.1116/1.581291

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