Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy
Huiyuan Geng, A Atsushi Yamaguchi1, Haruo Sunakawa, Norihiko Sumi, Kazutomi Yamamoto, and Akira Usui
Nitride Semiconductors Department, R&D Division, Furukawa Co., Ltd., 11-25-15 Wakagi-cho, Oyama, Tochigi 323-8601, Japan
Research Lab for Integrated Technological Systems, Kanazawa Institute of Technology, 21-3-4 Atago, Minato, Tokyo 105-0002, Japan
(Received May 2, 2010; accepted July 14, 2010; published online January 20, 2011)
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http:/dx.doi.org/10.1143/JJAP.50.01AC01
