++++5 статей: IOP, AVS, SD

[primavera]

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1) The role of substrate temperature and bias in the plasma deposition from tetramethylsilane.
P Favia, R Lamendola and R d'Agostino
Plasma Sources Sci. Technol., 1992, vol. 1

DOI:

http://dx.doi.org/10.1088/0963-0252/1/1/007

2)Detecting free radicals during the hot wire chemical vapor deposition of amorphous silicon carbide films using single-source precursors
Gillian A. Zaharias, H. L. Duan, and Stacey F. Bent
J. Vac. Sci. Technol. A 24, 542 (2006)

DOI:

http://dx.doi.org/10.1116/1.2194023

3) Compositional effects on electrical and mechanical properties in carbon-doped oxide dielectric films: Application of Fourier-transform infrared spectroscopy
Ebrahim Andideh, Michael Lerner, Gerald Palmrose, Safaa El-Mansy, Tracey Scherban, Guanghai Xu, and Jeanette Blaine
J. Vac. Sci. Technol. B 22, 196 (2004)

DOI:

http://dx.doi.org/10.1116/1.1640401

4)Growth mechanism of 3C–SiC(111) films on Si using tetramethylsilane by rapid thermal chemical vapor deposition
Y. H. Seo, K. S. Nahm, E.-K. Suh, H. J. Lee, and Y. G. Hwang
J. Vac. Sci. Technol. A 15, 2226 (1997)

DOI:

http://dx.doi.org/10.1116/1.580538

5) Carbon-excess silicon carbide deposition from pyrolysis of tetramethylsilane
K. H. Yoon, J. Desmaison
Surface and Coatings Technology
Volume 56, Issue 3, 10 March 1993, Pages 243-248

DOI:

http://dx.doi.org/10.1016/0257-8972(93)90257-O

Заранее, большое спасибо!!

[Владимир Б]

Вот

[primavera]

СПАСИБО, Владимир Б !!! )))

[macro]

5

[primavera]

Большое спасибо, macro !!!

[suprachemister]

2

[primavera]

Спасибо, suprachemister !! )))