++++SD (1) и Scientific.net (4) спасибо chem1990 )))

[primavera]

Добрый день! Помогите, пожалуйста, ознакомиться со статьями:

SD

1) Nitrogen radical densities during GaN growth by molecular beam epitaxy, plasma-assisted metalorganic chemical vapor deposition, and conventional metalorganic chemical vapor deposition
Michio Sato
Solid-State Electronics, Volume 41, Issue 2, February 1997 , Pages 223-226

DOI:

http://dx.doi.org/10.1016/S0038-1101(96)00171-2

Scientific.net

2) Growth and Characterization of Thin Films and Patterned Substrates of III-V Nitrides on SiC (0001) Substrates
Robert F. Davis et al., 1998, Materials Science Forum, 264-268, 1111

DOI:

http://dx.doi.org/10.4028/www.scientific.net/MSF.264-268.1111

3) Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
Urban Forsberg et al., 1998, Materials Science Forum, 264-268, 1133

DOI:

http://dx.doi.org/10.4028/www.scientific.net/MSF.264-268.1133

4) Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers
A. Strittmatter et al., 1998, Materials Science Forum, 264-268, 1145

DOI:

http://dx.doi.org/10.4028/www.scientific.net/MSF.264-268.1145

5) Nitride-Based Emitters on SiC Substrates
J. Edmond et al., 1998, Materials Science Forum, 264-268, 1421

DOI:

http://dx.doi.org/10.4028/www.scientific.net/MSF.264-268.1421

Спасибо!

[chem1990]

[chem1990]

это остальные
открывать можешь как обычный PDF

[primavera]

Огромное спасибо !!!